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mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 1 rf device data freescale semiconductor rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets optimized for broadband operation from 470 to 860 mhz. device has an integrated input matching network for better power distribution. these devices are ideally suited for use in analog or digital television transmitters. ? typical narrowband performance: v dd =50volts,i dq = 1400 ma, channel bandwidth = 8 mhz, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 7.61 mhz signal bandwidth @ 4 mhz offset with an integration bandwidth of 4 khz. signal type p out (w) f (mhz) g ps (db) d (%) acpr (dbc) irl (db) dvb--t (8k ofdm) 125 avg. 860 19.3 30.0 --60.5 -- 1 2 ? typical pulsed broadband performance: v dd =50volts,i dq = 1400 ma, pulsed width = 100 sec, duty cycle = 10% signal type p out (w) f (mhz) g ps (db) d (%) pulsed 600 peak 470 19.3 47.1 650 20.0 53.1 860 18.8 48.9 features ? capable of handling >65:1 vswr through all phase angles @ 50 vdc, 860 mhz, dvb--t (8k ofdm) 240 watts avg. output power (3 db input overdrive from rated p out ) ? exceptional efficiency for class ab analog or digital television operation ? full performance across complete uhf tv spectrum, 470--860 mhz ? capable of 600 watt cw output power with adequate thermal management ? integrated input matching ? extended negative gate--source voltage range of --6.0 v to +10 v ? improves class c performance, e.g. in a doherty peaking stage ? enables fast, easy and complete shutdown of the amplifier ? characterized from 20 v to 50 v for extended operating range for use with drain modulation ? excellent thermal characteristics ? rohs compliant ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13 inch reel. r5 suffix = 50 units, 56 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +130 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c total device dissipation @ t c =25 c derate above 25 c p d 1052 5.26 w w/ c operating junction temperature (1,2) t j 225 c 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculator s to access mttf calculators by product. document number: mrfe6vp8600h rev. 1, 9/2011 freescale semiconductor technical data 470--860 mhz, 600 w, 50 v ldmos broadband rf power transistors mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 case 375d--05, style 1 ni--1230 mrfe6vp8600hr6 case 375e--04, style 1 ni--1230s mrfe6vp8600hsr6 parts are push--pull figure 1. pin connections (top view) drain 1 31 42 drain 2 gate 1 gate 2 note: the backside of the package is the source terminal for the transistor. ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 74 c, 125 w cw, 50 v, 1400 ma, 860 mhz r jc 0.19 (3) c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (2001--4000 v) machine model (per eia/jesd22--a115) b (201--400 v) charge device model (per jesd22--c101) iv (>1000 v) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc drain--source breakdown voltage (v gs =0vdc,i d = 100 ma) v (br)dss 130 140 ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 5 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 20 adc on characteristics gate threshold voltage (4) (v ds =10vdc,i d = 980 adc) v gs(th) 1.5 2.07 2.5 vdc gate quiescent voltage (5) (v dd =50vdc,i d = 1400 madc, measured in functional test) v gs(q) 2.1 2.65 3.1 vdc drain--source on--voltage (4) (v gs =10vdc,i d =2adc) v ds(on) ? 0.24 ? vdc forward transconductance (v ds =10vdc,i d =20adc) g fs ? 15.6 ? s dynamic characteristics (4) reverse transfer capacitance (6) (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.49 ? pf output capacitance (6) (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 79.9 ? pf input capacitance (7) (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 264 ? pf functional tests (5) (in freescale narrowband test fixture, 50 ohm system) v dd =50vdc,i dq = 1400 ma, p out = 125 w avg., f = 860 mhz, dvb--t (8k ofdm) single channel. acpr measured in 7.61 mhz signal bandwidth @ 4 mhz offset with an integration bandwidth of 4 khz. power gain g ps 18.0 19.3 21.0 db drain efficiency d 29.0 30.0 ? % adjacent channel power ratio acpr ? --60.5 --58.5 dbc input return loss irl ? -- 1 2 -- 9 db 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 3. performance with thermal grease tim (thermal i nterface material) will typically degrade by 0.05 c/w due to the increased thermal contact resistance of this tim. 4. each side of device measured separately. 5. measurement made with device i n push--pull configuration. 6. part internally input matched. 7. die capacitance value without internal matching. (continued)
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 3 rf device data freescale semiconductor table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical dvb--t (8k ofdm) performance (in freescale narrowband test fixture, 50 ohm system) v dd =50vdc,i dq = 1400 ma, f = 860 mhz, dvb--t (8k ofdm) single channel. output peak--to--average ratio @ 0.01% probability on ccdf, p out = 125 w avg. par ? 7.8 ? db load mismatch vswr >65:1 at all phase angles, 3 db overdrive from rated p out (240 w avg.) no degradation in output power
4 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 figure 2. mrfe6vp8600hr6(hsr6) test circuit c omponent layout ? 860 mhz, dvb--t (8k ofdm) mrfe6vp8600h rev. 1 cut out area c1 c2 l1 r1 coax1 coax2 c4 c3 c5 c6 l2 c7 c8* c9 c10 l3 r2 c24 c25 c26 coax3 coax4 c14* c15* c16* c17* c18* c22 c21 c20 c19 c23* c11 c12 c13 *c8, c14, c15, c16, c17, c18 and c23 are mounted vertically. table 5. mrfe6vp8600hr6(hsr6) test circuit component designations and v alues ? 860 mhz, dvb--t (8k ofdm) part description part number manufacturer c1, c9 10 f, 50 v, chip capacitors grm55dr61h106ka88l murata c2, c10 2.2 f, 50 v, chip capacitors c3225x7r1h225k tdk c3, c4, c20, c21, c23 100 pf chip capacitors atc100b101jt500xt atc c5, c6 24 pf chip capacitors atc100b240jt500xt atc c7 0.8--8.0 pf variable capacitor 27291sl johanson components c8 12 pf chip capacitor atc100b120jt500xt atc c11, c24 2.2 f, 100 v, chip capacitors c3225x7r2a225kt tdk c12, c25 4.7 f, 100 v, chip capacitors grm55er72a475ka01b murata c13, c26 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp c14 6.8 pf chip capacitor atc100b6r8ct500xt atc c15 3.0 pf chip capacitor atc100b3r0ct500xt atc c16 2.7 pf chip capacitor atc100b2r7bt500xt atc c17 3.9 pf chip capacitor atc100b3r9ct500xt atc c18 5.1 pf chip capacitor atc100b5r1ct500xt atc c19, c22 1000 pf chip capacitors atc100b102jt50xt atc coax1, 2, 3, 4 25 ? semirigid coax, length 2.0? UT--141C--25 micro--coax l1, l3 5.0 nh, 2 turn inductors a02tklc coilcraft l2 2.5 nh, 1 turn inductor a01tklc coilcraft r1, r2 10 ? , 1/4 w chip resistors crcw120610r0jnea vishay pcb 0.030 , r =3.5 ro4350b rogers
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 5 rf device data freescale semiconductor figure 3. mrfe6vp8600hr6(hsr6) test circuit schematic ? 860 mhz, dvb--t (8k ofdm) rf input z1 dut z44 c7 z23 z25 coax1 coax2 z37 c1 z38 z26 c18 z24 c2 z21 z22 v bias v supply c12 c13 + z2 z5 z6 c5 c6 z7 z8 c8 z9 z10 r1 z18 r2 c9 c10 v bias z13 z14 z46 v supply c26 + rf output z42 coax3 coax4 z43 l2 z11 z12 z17 l3 z20 z15 z16 l1 z19 c19 c22 z40 c21 c20 z39 c11 c25 z47 z45 c24 c23 z41 z35 z36 z33 z34 c17 z31 z32 c16 z29 z30 c15 z27 z28 c14 c4 z4 c3 z3 z1 0.204 x 0.062 microstrip z2 0.245 x 0.080 microstrip z3, z4 0.445 x 0.060 microstrip z5, z6 0.019 x 0.100 microstrip z7, z8 0.415 x 0.400 microstrip z9, z10 0.083 x 0.400 microstrip z11, z12 0.022 x 0.400 microstrip z13, z14 0.208 x 0.850 microstrip z15, z16 0.242 x 0.960 microstrip z17, z18 0.780 x 0.080 microstrip z19*, z20* 0.354 x 0.080 microstrip z21, z22 0.164 x 0.520 microstrip z23, z24 0.186 x 0.520 microstrip z25, z26 0.088 x 0.420 microstrip z27, z28 0.072 x 0.420 microstrip z29, z30 0.072 x 0.420 microstrip z31, z32 0.259 x 0.420 microstrip z33, z34 0.075 x 0.420 microstrip z35, z36 0.052 x 0.420 microstrip z37, z38 0.211 x 0.100 microstrip z39, z40 0.389 x 0.060 microstrip z41 0.070 x 0.080 microstrip z42 0.018 x 0.080 microstrip z43 0.204 x 0.062 microstrip z44*, z45* 0.850 x 0.080 microstrip z46, z47 0.250 x 0.080 microstrip * line length includes microstrip bends
6 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 typical characteristics ? 860 mhz i ds(q) = 100 ma figure 4. normalized v gs quiescent versus case temperature normalized v gs(q) 3.3 0 10 2.1 2.3 2.2 v gs , gate--source voltage (volts) figure 5. drain current versus gate--source voltage 2.4 9 4 v dd =50vdc note: measured with both sides of the transistor tied together. t c , case temperature ( c) 1.06 1.05 1.04 1.02 1.01 1.03 1 0.99 0.98 0.97 0.96 0.95 0.94 100 -- 5 0 0 --25 25 50 75 1400 ma 1900 ma 2400 ma v dd =50vdc 8 7 6 5 2 3 1 2.6 2.5 2.7 2.9 2.8 3 3.1 3.2 i dd , drain current (amps) 40 vdc 30 vdc 20 vdc 10 vdc 50 1 1000 020 10 v ds , drain--source voltage (volts) figure 6. capacitance versus drain--source voltage c, capacitance (pf) 30 100 10 40 c oss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc note: each side of device measured separately. c rss 50 64 32 62 p in , input power (dbm) figure 7. pulsed cw output power versus input power 60 43 58 36 37 38 39 40 41 42 p out , output power (dbm) p3db = 59.0 dbm (794 w) actual ideal p2db = 58.8 dbm (759 w) v dd =50vdc,i dq = 1400 ma, f = 860 mhz pulse width = 100 sec, duty cycle = 10% 56 54 34 35 33 p1db = 58.4 dbm (692 w) 52 figure 8. pulsed power gain and drain efficiency versus output power p out , output power (watts) pulsed g ps , power gain (db) 16 22 10 19 21 20 100 1000 d g ps 18 17 v dd =50vdc,i dq = 1400 ma f = 860 mhz pulse width = 100 sec duty cycle = 10% 0 60 50 20 40 30 d, drain efficiency (%) 10
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 7 rf device data freescale semiconductor typical characteristics ? dvb--t (8k ofdm) 12 0.0001 100 0 peak--to--average (db) figure 9. source peak--to--average dvb--t (8k ofdm) 10 1 0.1 0.01 0.001 2468 probability (%) dvb--t (8k ofdm) 64 qam data carrier modulation 5 symbols 5 -- 2 0 -- 5 7.61 mhz f, frequency (mhz) figure 10. dvb--t (8k ofdm) spectrum -- 3 0 -- 4 0 -- 5 0 -- 9 0 -- 7 0 -- 8 0 --100 -- 11 0 -- 6 0 -- 4 -- 3 -- 2 -- 1 0 1 2 3 4 4khzbw (db) 10 acpr measured at 4 mhz offset from center frequency acpr, adjacent channel power ratio (dbc) figure 11. single--carrier dvb--t (8k ofdm) drain efficiency, power gain and acpr versus output power 10 -- 6 8 p out , output power (watts) avg. 40 -- 5 6 25 15 -- 5 8 -- 6 2 g ps , power gain (db) 35 30 20 -- 6 0 -- 6 4 -- 6 6 d g ps acpr v dd =50vdc,i dq = 1400 ma f = 860 mhz, dvb--t (8k ofdm) 64 qam data carrier modulation 5 symbols 4khzbw dvb--t (8k ofdm) 64 qam data carrier modulation, 5 symbols 20 140 200 40 60 80 100 120 160 180 d , drain efficiency (%)
8 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature -- cw note: the mttf calculation for this graph is based on the thermal resistance of the part using thermal grease tim mounting. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5 v dd =50vdc p out = 125 w cw v dd =50vdc,i dq = 1400 ma, p out = 125 w avg. f mhz z source ? z load ? 860 1.14 + j0.88 2.61 + j1.84 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 13. series equivalent source and load impedance z source z load input matching network device under test output matching network -- -- + +
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 9 rf device data freescale semiconductor 470--860 mhz reference circuit v dd =50volts,i dq = 1400 ma, channel bandwidth = 8 mhz, input signal par = 9.5 db @ 0. 01% probability on ccdf, t c =50 c. signal type p out (w) f (mhz) g ps (db) d (%) output par (db) imd shoulder (dbc) dvb--t (8k ofdm) 125 avg. 470 19.0 27.2 8.2 --31.1 650 20.3 30.6 7.6 --30.3 860 19.0 27.9 7.7 --30.4 figure 14. mrfe6vp8600hr6(hsr 6) broadband test circuit component layout ? 470--860 mhz mrfe6vp8600h rev. 1 c1 c2 l1 r1 coax1 coax2 c5 c4 c6 c7 c8 c9* c13 c14 l2 r2 c39 c40 coax3 coax4 c35 c34 c32 c31 c33* c18 c19 *c9, c11, c12, c21, c22, c23, c24, c25, c26, c27, c28, c29, c30 and c33 are mounted vertically. c3 c10 c11* c12* c15 c38 c37 c36 c29* c30* c24* c23* c25* c26* c27* c28* c21* c22* c20 c17 c16 c6 q1
10 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 470--860 mhz reference circuit table 6. mrfe6vp8600hr6(hsr6) broadband test circ uit component designations and values ? 470--860 mhz part description part number manufacturer c1, c13 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c2, c14 2.2 f, 50 v chip capacitors c3225x7r1h225k tdk c3, c15 10 pf chip capacitors atc100b100jt500xt atc c4, c5 47 pf chip capacitors atc100b470jt500xt atc c6, c7 27 pf chip capacitors atc100b270jt500xt atc c8, c10 0.8--8.0 pf variable capacitors 27291sl johanson components c9, c28 8.2 pf chip capacitors atc100b8r2ct500xt atc c11, c12 6.8 pf chip capacitors atc800b6r8bt500xt atc c16, c37 39,000 pf chip capacitors atc200b393kt50xt atc c17, c38 2.2 f, 100 v chip capacitors c3225x7r2a225kt tdk c18, c39 4.7 f, 100 v chip capacitors grm55er72a475ka01b murata c19, c40 220 f, 100 v electrolytic capacitors eev--fk2a221m panasonic--ecg c20, c36 56 pf chip capacitors atc100b560ct500xt atc c21, c25, c29 7.5 pf chip capacitors atc800b7r5ct500xt atc c22, c30 8.2 pf chip capacitors atc800b8r2ct500xt atc c23 13 pf chip capacitor atc800b130jt500xt atc c24 9.1 pf chip capacitor atc800b9r1ct500xt atc c26 3.3 pf chip capacitor atc800b3r3ct500xt atc c27 3.9 pf chip capacitor atc100b3r9ct500xt atc c31, c35 1,000 pf chip capacitors atc100b102jt50xt atc c32, c33, c34 120 pf chip capacitors atc100b121jt500xt atc l1, l2 5.0 nh, 2 turn inductors a02tklc coilcraft r1, r2 10 ? , 1/4 w chip resistors crcw120610r0jnea vishay coax1, 2, 3, 4 25 ? semirigid coax, length 2.0 UT--141C--25 micro--coax q1 rf power ldmos transistor mrfe6vp8600hr6 freescale pcb 0.030 , r =3.5 ro4350b rogers table 7. mrfe6vp8600hr6(hsr6) broadband test circuit microstrips ? 470--860 mhz microstrip description z1 0.204 x 0.062 microstrip z2 0.245 x 0.080 microstrip z3, z4 0.445 x 0.060 microstrip z5, z6 0.019 x 0.100 microstrip z7, z8 0.305 x 0.400 microstrip z9, z10 0.083 x 0.400 microstrip z11, z12 0.095 x 0.400 microstrip z13, z14 0.055 x 0.850 microstrip z15, z16 0.083 x 0.850 microstrip z17, z18 0.071 x 0.850 microstrip z19, z20 0.187 x 0.960 microstrip z21, z22 0.055 x 0.960 microstrip z23, z24 0.780 x 0.080 microstrip z25*, z26* 0.354 x 0.080 microstrip z27, z28 0.164 x 0.520 microstrip z29, z30 0.074 x 0.520 microstrip z31, z32 0.075 x 0.520 microstrip microstrip description z33, z34 0.038 x 0.520 microstrip z35, z36 0.170 x 0.420 microstrip z37, z38 0.269 x 0.420 microstrip z39, z40 0.069 x 0.420 microstrip z41, z42 0.075 x 0.420 microstrip z43, z44 0.038 x 0.420 microstrip z45, z46 0.038 x 0.100 microstrip z47, z48 0.075 x 0.100 microstrip z49, z50 0.169 x 0.100 microstrip z51, z52 0.389 x 0.060 microstrip z53 0.070 x 0.080 microstrip z54 0.018 x 0.080 microstrip z55 0.204 x 0.062 microstrip z56, z57 0.278 x 0.080 microstrip z58*, z59* 0.886 x 0.080 microstrip * line length includes microstrip bends
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 11 rf device data freescale semiconductor 470--860 mhz reference circuit figure 15. mrfe6vp8600hr6(hsr6) broadband test circuit schematic ? 470--860 mhz rf input z1 q1 z56 c8 z35 z37 coax1 coax2 z49 c1 z50 z38 c27 z36 c2 z27 z28 v bias v supply c18 c19 + z2 z5 z6 c6 c7 z7 z8 c9 z9 z10 r1 z24 r2 c13 c14 v bias z13 z14 z58 v supply rf output z54 coax3 coax4 z55 z11 z12 z23 l2 z26 z15 z16 l1 z25 c31 c35 z52 c34 c32 z51 c20 z59 z57 c36 c33 z53 z47 z48 z45 z46 z43 z44 z41 z42 z39 z40 c5 z4 c4 z3 c10 c11 z17 z18 c12 z19 z20 c15 c3 z21 z22 c28 c22 c30 c21 c29 c26 c25 z33 z34 c24 z31 z32 c23 z29 z30 c17 c16 c39 c40 + c38 c37
12 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 typical characteristics ? 470--860 mhz reference circuit imd, intermodulation distortion shoulder (dbc) g ps , power gain (db) d , drain efficiency (%) 1000 15 21 0 60 p out , output power (watts) pulsed figure 16. broadband pulsed power gain and drain efficiency versus output power ? 470--860 mhz 100 10 19 18 17 16 40 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) 20 50 g ps , power gain (db) irl, input return loss (db) -- 1 3 -- 6 900 450 irl g ps f, frequency (mhz) figure 17. broadband pulsed power gain, drain efficiency and irl versus frequency 800 750 700 650 600 550 500 21 20 66 62 46 38 d , drain efficiency (%) d 17 16 13 19 18 54 -- 5 -- 11 figure 18. dvb--t (8k ofdm) drain efficiency, power gain and imd shoulder versus output power ? 470--860 mhz 5--35 p out , output power (watts) avg. 35 -- 5 25 10 -- 1 5 40 -- 2 5 g ps v dd =50vdc,i dq = 1400 ma dvb--t (8k ofdm), 64 qam data carrier modulation, 5 symbols 30 0 200 15 d 860 mhz 15 14 850 -- 7 20 imd (1) v dd =50vdc,p out = 600 w peak, i dq = 1400 ma pulse width = 100 sec, duty cycle = 10% 665 mhz 470 mhz 860 mhz 470 mhz 665 mhz 665 mhz 470 mhz 860 mhz 665 mhz 470 mhz 665 mhz 470 mhz 860 mhz 58 50 42 34 -- 1 0 -- 2 0 -- 3 0 400 v dd =50vdc,i dq = 1400 ma pulse width = 100 sec duty cycle = 10% 860 mhz 80 120 160 (1) intermodulation distortio n shoulder measurement made using delta marker at 4.2 mhz offset from center frequency.
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 13 rf device data freescale semiconductor typical characteristics ? 470--860 mhz reference circuit g ps , power gain (db) d , drain efficiency (%) imd, intermodulation distortion shoulder (dbc) figure 19. dvb--t (8k ofdm) drain efficiency, power gain and imd shoulder versus output power ? 470--860 mhz 5--30 p out , output power (watts) avg. 40 5 25 10 -- 5 -- 1 5 g ps v dd = 50 vdc, i dq = 700 ma dvb--t (8k ofdm), 64 qam data carrier modulation, 5 symbols 30 15 d 20 imd (1) 470 mhz 665 mhz 665 mhz -- 0 -- 1 0 -- 2 0 860 mhz 470 mhz 665 mhz 860 mhz 470 mhz 860 mhz 35 40 0 200 80 120 160 -- 2 5 (1) intermodulation distortio n shoulder measurement made using delta marker at 4.2 mhz offset from center frequency. g ps , power gain (db) t c =35 c f, frequency (mhz) figure 20. broadband power gain and irl versus frequency 900 450 irl, input return loss (db) v dd =50vdc,p out = 125 w avg. i dq = 1400 ma, dvb--t (8k ofdm) 64 qam data carrier modulation, 5 symbols 10 21 17 13 19 15 -- 1 2 0 -- 3 500 600 700 800 -- 4 -- 11 g ps irl 75 c 22 20 18 16 14 12 11 550 650 750 850 -- 1 -- 2 -- 5 -- 6 -- 1 0 -- 9 -- 7 -- 8 75 c 50 c 50 c 35 c f, frequency (mhz) figure 21. broadband drain efficiency and imd shoulder versus frequency 900 450 v dd =50vdc,p out = 125 w avg., i dq = 1400 ma dvb--t (8k ofdm), 64 qam data carrier modulation, 5 symbols d , drain efficiency (%) 17 37 35 27 31 -- 3 5 -- 1 5 -- 1 9 -- 2 3 -- 1 7 -- 2 1 t c =35 c imd (1) d 35 c 75 c 500 600 700 800 (1) intermodulation distortio n shoulder measurement made using delta marker at 4.2 mhz offset from center frequency. 29 19 21 -- 2 5 -- 2 9 -- 2 7 -- 3 3 -- 3 1 550 650 750 850 50 c 50 c 75 c 33 25 23 imd, intermodulation distortion shoulder (dbc)
14 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 470--860 mhz reference circuit z o =10 ? z source f = 470 mhz f = 860 mhz f = 470 mhz f = 860 mhz z load v dd =50vdc,i dq = 1400 ma, p out = 125 w avg. f mhz z source ? z load ? 470 1.96 -- j3.13 5.30 + j1.92 500 1.91 -- j2.46 4.65 + j1.95 530 1.88 -- j1.86 4.50 + j2.35 560 1.91 -- j1.37 4.71 + j2.66 590 1.93 -- j0.94 5.40 + j2.75 620 1.99 -- j0.49 5.93 + j2.29 650 2.11 -- j0.14 6.03 + j1.81 680 2.17 + j0.02 6.04 + j1.45 710 2.14 + j0.26 5.58 + j0.95 740 2.11 + j0.32 5.37 + j0.80 770 1.92 + j0.56 4.80 + j0.56 800 1.65 + j0.91 4.78 + j0.55 830 1.50 + j1.07 4.59 + j0.45 860 0.95 + j1.72 3.93 + j0.11 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 22. broadband series equivalent source and load impedance ? 470--860 mhz z source z load input matching network device under test output matching network -- -- + +
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 15 rf device data freescale semiconductor package dimensions
16 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5
mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 19 rf device data freescale semiconductor product documentation, software and tools refer to the following documents to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2011 ? initial release of data sheet 1 sept. 2011 ? added fig. 19, dvb--t (8k ofdm) drain efficiency, power gain and imd shoulder versus output power -- 470--860 mhz @ 700 ma to indicate efficiency gains with appropriate precorrection systems, p. 13
20 rf device data freescale semiconductor mrfe6vp8600hr6 mrfe6vp8600hr5 mrfe6vp8600hsr6 mrfe6vp8600hsr5 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrfe6vp8600h rev. 1, 9/2011

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